View BAV23CLT1G_4743571.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BAV23CLT1G Dual High Voltage Common Cathode Switching Diode
Features
* Moisture Sensitivity Level: 1 * ESD Rating - Human Body Model: Class 2 * * * *
ESD Rating - Machine Model: Class C Fast Switching Speed Switching Application This is a Halide-Free Device This is a Pb-Free Device
http://onsemi.com
ANODE 1 2 ANODE
3 CATHODE
Typical Applications
3 1 2
* LCD TV * Power Supply * Industrial
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Non-Repetitive Peak Forward Surge Current @ t = 1.0 ms @ t = 100 ms @ t = 10 ms Symbol VR VRRM IF IFSM Value 250 250 400 9.0 3.0 1.7 625 4.0 400 Unit V V mA A 1
SOT-23 CASE 318 STYLE 9
MARKING DIAGRAM
3 AA MG G 2 AA = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
Peak Forward Surge Current Non-Repetitive Peak Per Human Body Model Per Machine Model
IFM(surge) HBM MM
mAdc kV V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device BAV23CLT1G Package SOT-23 (Pb-Free) Shipping 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2009
May, 2009 - Rev. 0
1
Publication Order Number: BAV23CLT1/D
BAV23CLT1G
THERMAL CHARACTERISTICS
Characteristic SINGLE HEATED Total Device Dissipation (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Reference, Junction-to-Anode Lead (Note 1) Thermal Reference, Junction-to-Case (Note 1) Total Device Dissipation (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Thermal Reference, Junction-to-Anode Lead (Note 2) Thermal Reference, Junction-to-Case (Note 2) DUAL HEATED (Note 3) Total Device Dissipation (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Reference, Junction-to-Anode Lead (Note 1) Thermal Reference, Junction-to-Case (Note 1) Total Device Dissipation (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Thermal Reference, Junction-to-Anode Lead (Note 2) Thermal Reference, Junction-to-Case (Note 2) Junction and Storage Temperature Range 1. FR-4 @ 100 1 oz. copper traces, still air. 2 oz. copper traces, still air. 2. FR-4 @ 500 3. Dual heated values assume total power is sum of two equally powered channels mm2, mm2, PD RqJA R_JL R_JC PD RqJA R_JL R_JC TJ, Tstg 390 3.1 321 159 138 540 4.3 231 148 119 -55 to +150 mW mW/C C/W C/W C/W mW mW/C C/W C/W C/W C PD RqJA R_JL R_JC PD RqJA R_JL R_JC 265 2.1 472 263 289 345 2.7 362 251 250 mW mW/C C/W C/W C/W mW mW/C C/W C/W C/W Symbol Max Unit
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Reverse Breakdown Voltage (IBR = 100 mAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) IR - - 250 0.1 100 - mAdc Symbol Min Max Unit
V(BR) VF
Vdc mV
- - - -
1000 1250 5.0 150
CT trr
pF ns
http://onsemi.com
2
BAV23CLT1G
1 IF, FORWARD CURRENT (mA) Ir, REVERSE CURRENT (mA) 100 10 1 0.1 0.01 0.001 0.0001 25C 0C -40C 0 50 100 150 200 250 VR, REVERSE VOLTAGE (V) 150C 125C 75C
0.1
-40C 0C 25C
0.01 150C 0.4 0.6 0.8 1.0 1.2
75C 125C
0.001 0.2
1.4
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
3.0 CT, TOTAL CAPACITANCE (pF) 2.5 2.0 1.5 1.0 0.5 0
Figure 2. Reverse Current
TA = 25C f = 1 MHz
0
5
10
15
20
25
30
35
40
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
820 W +10 V 2.0 k 100 mH 0.1 mF D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 3.0 mA OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) IF 0.1 mF tr 10% tp t IF trr t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr
Figure 4. Recovery Time Equivalent Test Circuit
http://onsemi.com
3
BAV23CLT1G
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08.
D
SEE VIEW C 3
E
1 2
HE c e b q 0.25
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE
SOLDERING FOOTPRINT
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
4
BAV23CLT1/D

▲Up To Search▲

Price & Availability of BAV23CLT1G

	To Download BAV23CLT1G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .